一、个人基本信息

出生日期：1989年11月

籍贯：山西省应县

性别：女

民族：汉

专业技术职务：副教授

最高学历：博士研究生

工作单位：中国民航大学理学院

通信地址：天津市中国民航大学南院理学院

邮政编码：300300

电子邮箱：sy_wang@cauc.edu.cn

研究生招生学科：物理学（0702）

二、学习和工作经历简介

2022.01—至今，中国民航大学，理学院，副教授，硕士生导师

2017.07—2021.12，中国民航大学，理学院，讲师

2012.09—2017.07，中国科学院半导体研究所，微电子学与固体电子学，博士

2008.09—2012.07，南开大学，光电子技术科学，学士

三、课程教学

半导体物理，物理实验

四、主要研究方向和科研业绩

1）主要研究方向：飞秒激光改性

●方向一：主要研究半导体芯片的有源器件光电探测器，以及基于飞秒激光的半导体工艺开发

●方向二：主要研究飞机制造领域轻量化航空材料钛合金的摩擦磨损性能，以及基于飞秒激光的钛合金表面改性工艺开发

课题组搭建有同轴共聚焦飞秒激光加工与改性系统、光电探测器测试系统，可实现对飞秒激光加工与改性过程的在线监控以及光电探测器的性能测试，欢迎对飞秒激光掺杂、退火、改性领域感兴趣的同学报考研究生！

2）主要科研项目：

[1]钛合金飞秒激光织构-氮化协同作用及摩擦磨损性能研究，天津市自然科学基金多元投入青年项目，2024.10-2026.10，主持。

[2]锗锡材料飞秒激光诱导结晶机理及光电探测器研究，国家自然科学基金青年项目，2022.01-2024.12，主持。

[3]飞秒激光制备硅基锗锡与激光器基础研究，区域光纤通信网与新型光通信系统国家重点实验室开放课题，2021.01-2022.12，主持。

[4]适用于短波红外光电探测的锗材料飞秒激光掺杂，弱光非线性光子学教育部重点实验室开放基金，2021.04-2023.03，主持。

[5]飞秒激光调控锗锡组分的研究，中央高校基本科研业务费，2020.07-2022.07，主持。

[6]无结型锗锡隧穿场效应晶体管的研究，中央高校基本科研业务费，2018.01-2019.12，主持。

[7]锗锡/锗硅锡低功耗电子器件，中国民航大学科研启动基金，2018.01-2019.12主持。

五、论著目录

1）学术论文

[1]Xi Luo,Suyuan Wang*,Xu Zhou,Xiangquan Liu,Jun Zheng,Buwen Cheng, andQiang Wu, Nitrogen-assisted femtosecond laser-driven hierarchical surface restructuring of α-GeSn thinfilms and enhanced infrared absorption, Materials Science in Semiconductor Processing,204(2026)110287.

[2]Suyuan Wang,Xu Zhou, Jun Zheng,Xiangquan Liu, Bin Zhang,Xiang Liu, Zepeng Li,Xiong Yang,Tong Wei,Buwen Cheng, andQiang Wu, Optimization of GeSn nanostructures via tuning of femtosecondlaser parameters, Applied Surface Science,679(2025)161153.

[3]Zhiyong Guo, Zhemin Shen, Yanling Tian, Weidong Liu, Xuhao Wang, andSuyuan Wang, Development of anelliptic vibration mechanism for wire electrochemical micromachining,Sensors and Actuators A-Physical,380(2024)116068.

[4]Lu Dou, Li Yang,Suyuan Wang*,Bin Zhang,Wenfang Zhu, Yuwei Jiang, Zhiqin Yu,andQiang Wu*, Dry friction and wear behavior of volcano arrays based mixed morphologytextured by femtosecond laser, Materials Today Communications,34(2023)105093.

[5]Suyuan Wang, Qiang Wu, Jun Zheng, Bin Zhang, Song Huang, Zixi Jia, Jianghong Yao, Qingjun Zhou, Li Yang, Jingjun Xu, and Buwen Cheng, Well-aligned periodic germanium nanoisland arrays with large areas and improved field emission performance induced by femtosecond laser, Applied Surface Science, 508 (2020) 145308.

[6]Suyuan Wang, Qiang Wu, Jun Zheng, Bin Zhang,Jianghong Yao, Qingjun Zhou, Li Yang, Jingjun Xu, and Buwen Cheng, GeSn/GeSiSn double-heterojunction short channel tunnel field-effect transistor design, Japanese Journal of Applied Physics, 59 (2020) 034001.

[7]Suyuan Wang, Jun Zheng, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng, and Qiming Wang, Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications, Superlattices and Microstructures, 111 (2017) 286-292.

[8]Suyuan Wang, Jun Zheng, Chunlai. Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng, and Qiming Wang, Numerical calculationof strain-N⁺-Ge_1−xSn_x/P⁺-δGe_1−xSn_x/N⁻-Ge_1−y−zSi_ySn_z/P⁺-Ge_1−y−zSi_ySn_zheterojunction tunnel field-effect transistor, Japanese Journal of Applied Physics, 56 (2017) 054001.

[9] Jun Zheng,Suyuan Wang, Hui Cong, Colleen S. Fenrich, Zhi Liu, Chunlai Xue, Chuanbo Li, Yuhua Zuo,Buwen Cheng, James S. Harris, and Qiming Wang, Characterization of a Ge_1−x−ySi_ySn_x/Ge_1−xSn_xmultiple quantum well structure grown by sputtering epitaxy,Optics Letters, 42 (2017) 1608-1611.

[10] Jun Zheng,Suyuan Wang, Zhi Liu, Hui Cong, Chunlai Xue, Chuanbo Li, Yuhua Zuo,Buwen Cheng, and Qiming Wang, GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy, Applied Physics Letters, 108 (2016) 033503.

[11]Suyuan Wang, Jun Zheng, Chunlai Xue, Chuanbo Li, Yuhua Zuo,Buwen Cheng, and Qiming Wang, Ni ohmic contacts to n-type Ge_1−x−ySi_xSn_yusing phosphorous implant and segregation, AIP Advances, 5 (2015) 127241.

[12] Jun Zheng,Suyuan Wang, Xu Zhang, Zhi Liu, Chuanlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng, and Qiming Wang, Ni(Ge_1−x−ySi_ySn_x) ohmic contact formation on p-type Ge_0.86Si_0.07Sn_0.07, IEEE Electron Device Letters, 36 (2015) 878-880.

[13] Jun Zheng,Suyuan Wang,Tianwei Zhou, Yuhua Zuo, Buwen Cheng, and Qiming Wang, Single-crystalline Ge_1-x-ySi_xSn_yalloys on Si (100) grown by magnetron sputtering, Optical Materials Express, 5 (2015) 287-294.

2）申请专利：

[1]王素元，赵世康，冯塬洺，基于飞秒激光氮化的钛合金耐磨改性方法，中国，202610025736.7.

[2]王素元，罗曦，一种光电探测器吸收层的制备方法及光电探测器，中国，CN202510203053.1.

[3]王素元，董佳欣，一种黑锗锡的制备方法，中国，CN202410743507.X.