Abstract:

Based on CMOS bulk-driven structure, a low-voltage current reference circuit with high electromagnetic interference (EMI)immunity is proposed, improving the reliability of RF front-end receiver circuit in primary surveillance radar. In the circuit, bulk-driven structure realizes low-voltage supply and sensitive isolation structure improves EMI immunity. The design is implemented in a 0.35 μm standard CMOS process using 1V power supply. Theoretical analysis and simulation results for EMI robustness are presented and compared with the classical bulk-driven structure. Results show that the current shift of the proposed design is less than 0.3 μA when a 3 times of EMI referred to the reference current is presented in the input.

Key words: CMOS bulk-driven, low-voltage, current reference, sensitive isolation, EMI immunity